preliminary n otice : this is no t a final spe cifica tion . s om e param etric lim its are su bject to cha nge. mar. 2001 mitsubishi hvigbt modules CM900HB-90H high power switching use insulated type i c ................................................................... 900a v ces ....................................................... 4500v insulated type 1-element in a pack application inverters, converters, dc choppers, induction heating, dc to dc converters. CM900HB-90H outline drawing & circuit diagram dimensions in mm circuit diagram e c e e c c e g c label c e g c e cm ee cc 29.5 5 13 61.5 61.5 140 124 0.25 40 79.4 20.25 57 0.25 171 190 5.2 40 15 41.25 57 0.25 57 0.25 38 28 20 3 - m4 nuts 8 - 7mounting holes 6 - m8 nuts 2nd-version hvigbt (high voltage insulated gate bipolar transistor) modules hvigbt modules (high voltage insulated gate bipolar transistor modules)
preliminary n otice : this is no t a final spe cifica tion . s om e param etric lim its are su bject to cha nge. mar. 2001 mitsubishi hvigbt modules CM900HB-90H high power switching use insulated type v v v ce = v ces , v ge = 0v v ge = v ges , v ce = 0v t j = 25 c t j = 125 c v cc = 2250v, i c = 900a, v ge = 15v v cc = 2250v, i c = 900a v ge1 = v ge2 = 15v r g = 10 ? resistive load switching operation i e = 900a, v ge = 0v i e = 900a, die / dt = ?800a / s (note 1) junction to case, igbt part junction to case, fwdi part case to fin, conductive grease applied i c = 90ma, v ce = 10v i c = 900a, v ge = 15v (note 4) v ce = 10v v ge = 0v collector cutoff current gate-emitter threshold voltage gate-leakage current collector-emitter saturation voltage input capacitance output capacitance reverse transfer capacitance total gate charge turn-on delay time turn-on rise time turn-off delay time turn-off fall time emitter-collector voltage reverse recovery time reverse recovery charge thermal resistance contact thermal resistance collector-emitter voltage gate-emitter voltage maximum collector dissipation junction temperature storage temperature isolation voltage mounting torque mass v ge = 0v v ce = 0v t c = 25 c pulse (note 1) t c = 25 c pulse (note 1) t c = 25 c, igbt part charged part to base plate, rms, sinusoidal, ac 60hz 1min. main terminals screw m8 mounting screw m6 auxiliary terminals screw m4 typical value collector current emitter current 4500 20 900 1800 900 1800 10000 ?0 ~ +125 ?0 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 2.2 maximum ratings (tj = 25 c) symbol item conditions unit ratings v v a a a a w c c v n? n? n? kg v ces v ges i c i cm i e (note 2) i em (note 2) p c (note 3) t j t stg v iso min typ max 18 0.5 3.90 2.40 2.40 6.00 1.20 5.20 1.80 0.010 0.020 ma a nf nf nf c s s s s v s c k/w k/w k/w 3.00 3.30 162 12.0 3.6 4.00 360 0.007 i ces i ges c ies c oes c res q g t d (on) t r t d (off) t f v ec (note 2) t rr (note 2) q rr (note 2) r th(j-c)q r th(j-c)r r th(c-f) electrical characteristics (tj = 25 c) symbol item conditions v ge(th) v ce(sat) limits unit 6.0 4.5 note 1. pulse width and repetition rate should be such that the device junction temp. (t j ) does not exceed t jmax rating. 2. i e , v ec , t rr , q rr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. 3. junction temperature (t j ) should not increase beyond 125 c. 4. pulse width and repetition rate should be such as to cause negligible temperature rise. 7.5 2nd-version hvigbt (high voltage insulated gate bipolar transistor) modules hvigbt modules (high voltage insulated gate bipolar transistor modules)
preliminary n otice : this is no t a final spe cifica tion . s om e param etric lim its are su bject to cha nge. mar. 2001 mitsubishi hvigbt modules CM900HB-90H high power switching use insulated type 2nd-version hvigbt (high voltage insulated gate bipolar transistor) modules performance curves 10 1 23 10 1 5710 0 23 5710 1 23 5710 2 10 3 7 5 3 2 10 2 7 5 3 2 7 5 3 2 10 0 capacitance vs. v ce ( typical ) capacitance c ies , c oes , c res ( nf ) collector-emitter voltage v ce ( v ) v ge = 0v, t j = 25 c c ies, c oes : f = 100khz c res : f = 1mhz output characteristics ( typical ) collector current i c ( a ) transfer characteristics ( typical ) collector current i c ( a ) gate-emitter voltage v ge ( v ) collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( a ) emitter current i e ( a ) emitter-collector voltage v ec ( v ) 1800 600 300 0 20 0 4812 900 16 1500 1200 0 8 6 4 2 1800 0 300 600 1200 900 1500 16 5 4 3 2 10 2 10 4 7 5 3 2 10 3 7 5 3 2 7 5 3 2 10 1 0 300 600 900 1200 1500 1800 10 0 2468 free-wheel diode forward characteristics ( typical ) collector-emitter saturation voltage characteristics ( typical ) t j = 25 c v ce = 10v t j = 25 c t j = 125 c v ge = 15v t j = 25 c t j = 125 c t j = 25 c collector-emitter saturation voltage v ce(sat) ( v ) 020 16 12 8 4 10 8 6 4 2 0 collector-emitter saturation voltage v ce(sat) ( v ) gate-emitter voltage v ge ( v ) collector-emitter saturation voltage characteristics ( typical ) t j = 25 c
preliminary n otice : this is no t a final spe cifica tion . s om e param etric lim its are su bject to cha nge. mar. 2001 mitsubishi hvigbt modules CM900HB-90H high power switching use insulated type 2nd-version hvigbt (high voltage insulated gate bipolar transistor) modules 7 5 3 2 710 2 10 0 7 23 5710 3 23 5 5 5 3 2 10 1 5 7 5 3 2 710 2 10 1 7 23 5710 3 23 5 5 5 3 2 10 0 5 v cc = 2250v, v ge = 15v r g = 10 ? , t j = 125 c inductive load half-bridge switching characteristics ( typical ) switching times ( s ) collector current i c ( a ) v cc = 2250v, t j = 125 c inductive load v ge = 15v, r g = 10 ? reverse recovery characteristics of free-wheel diode ( typical ) reverse recovery time t rr ( s ) emitter current i e ( a ) reverse recovery current i rr ( a ) 7 5 3 2 10 2 7 5 5 3 2 10 3 10 2 10 3 10 2 10 1 10 0 7 5 3 2 10 1 7 5 3 2 10 0 10 1 7 5 3 2 23 57 23 57 23 57 transient thermal impedance characteristics ( igbt part ) normalized transient thermal impedance z th(j c) time ( s ) 10 2 10 3 10 2 10 1 10 0 7 5 3 2 10 1 7 5 3 2 10 0 10 1 7 5 3 2 23 57 23 57 23 57 normalized transient thermal impedance z th(j c) time ( s ) transient thermal impedance characteristics ( fwdi part ) single pulse t c = 25 c r th(j c) = 0.010k/ w single pulse t c = 25 c r th(j c) = 0.020k/ w 20 16 12 8 4 0 20000 15000 0 5000 10000 v ge ?gate charge ( typical ) gate-emitter voltage v ge ( v ) gate charge q g ( nc ) v cc = 2250v i c = 900a
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